メーカー | 部品番号 | データシート | 部品情報 |
MAKO SEMICONDUCTOR CO.,...
|
2SC1623 |
107Kb/2P |
High DC current gain hFE 200(Typ)VCE 6V, IC 1mA |
Rohm
|
2SC4115S_REVB |
165Kb/3P |
Low VCE(sat)., VCE(sat) = 0.2V(Typ.), 竊뉹C / IB = 2A / 0.1A竊 |
MAKO SEMICONDUCTOR CO.,...
|
2SB1424 |
132Kb/2P |
Low VCE(SAT) 0.2V(Typ.) (IC/IB=-2A/-0.1mA). |
2SB1132 |
124Kb/2P |
Low VCE(sat) 0.2V(Typ) IC/IB=-500mA/-50mA |
Sanken electric
|
FGM623S |
387Kb/7P |
Low Saturation Voltage VCE(sat)=1.5V typ. (IC=30A) |
Rohm
|
2SB1184TLR |
172Kb/4P |
Low VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A), Complements the 2SD1760 / 2SD1864. |
Solid States Devices, I...
|
SDR950M |
79Kb/2P |
50A, 35nsec typ., 100-200 V Hyper Fast Rectifier |
International Rectifier
|
IRG4PC20UPBF |
693Kb/8P |
UltraFast Speed 1GBT (VCES=600V , VCE(on)typ.=1.85V , @VGE=15V , Ic=6.5A ) |
IRG4BH20K-LPBF |
298Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR ( VCES=1200V , VCE(on)typ.=3.17V , @VGE=15V.Ic=5.0A ) |
IRG4BC30FDPBF |
3Mb/11P |
Fast CoPack 1GBT ( VCES = 600V , VCE(on)typ. = 1.59V , VGE = 15V , IC = 17A ) |
IRG4BC20U |
167Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A) |
IRG4BC40U |
169Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A) |
IRG4PC40U |
148Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A) |
IRG4PC50F |
146Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A) |
IRG4PH40U |
163Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) |
IRG4PC30F |
145Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) |
IRG4PC40W |
116Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A) |
IRG4PH50K |
92Kb/6P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.77V, @Vge=15V, Ic=24A) |
IRG4PSC71U |
151Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.67V, @Vge=15V, Ic=60A) |
IRG4BC30K |
137Kb/8P |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A) |