メーカー | 部品番号 | データシート | 部品情報 |
NXP Semiconductors
|
MMZ09332B |
1Mb/28P |
High Efficiency/Linearity Amplifier Rev. 0, 8/2015 |
MMZ38333B |
1Mb/31P |
High Efficiency/Linearity Amplifier Rev. 0, 01/2017 |
TEA19161T |
428Kb/46P |
Digital controller for high-efficiency resonant power supply Rev. 1-10 March 2016 |
TEA2016AAT |
808Kb/58P |
Digital controller for high-efficiency resonant power supply Rev. 1.2-6 April 2020 |
TEA2016AAT |
572Kb/59P |
Digital controller for high-efficiency resonant power supply Rev. 1 - 15 February 2023 |
TEA19161CT |
466Kb/44P |
Digital controller for high-efficiency resonant power supply Rev. 2-26 February 2020 |
TEA19161T |
512Kb/44P |
Digital controller for high-efficiency resonant power supply Rev. 2.2 - 23 January 2023 |
TDA1562SD |
129Kb/24P |
70 W high efficiency power amplifier with diagnostic facility 2003 Feb 12 |
LPC1100 |
1Mb/2P |
Cortex-M0 based microcontrollers with industry-leading power and efficiency January 2010 |
S32K1XX |
1Mb/101P |
Low-power Arm Cortex-M4F/M0+ core with excellent energy efficiency Rev. 14, 08/2021 |
S32K1XX |
1Mb/100P |
Low-power Arm Cortex-M4F/M0+ core with excellent energy efficiency Rev. 12, 02/2020 |
BGA6130 |
742Kb/27P |
400 MHz to 2700 MHz 1 W high efficiency silicon amplifier Rev. 2-12 February 2014 |
S32K144 |
1Mb/100P |
Voltage range: 2.7 V to 5.5 V Low-power Arm Cortex-M4F/M0+ core with excellent energy efficiency Rev. 13, 04/2020 |
PMEG6002EB115 |
74Kb/10P |
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an integrated guard ring for stress protection, encapsulated in ultra small and flat lead Surface-Mounted Device (SMD) plastic packages Rev. 01-24 November 2006 |
PMEG3010EP115 |
97Kb/13P |
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD128 small and flat lead Surface-Mounted Device (SMD) plastic package. Rev. 01-30 December 2008 |