メーカー | 部品番号 | データシート | 部品情報 |
Samsung semiconductor
|
KA224 |
376Kb/8P |
QUAD OPERATIONAL AMPLIFIER |
KA248 |
150Kb/7P |
QUAD OPERATIONAL AMPLIFIER |
KM44C4003C |
376Kb/20P |
4M x 4Bit CMOS Quad CAS DRAM with Fast Page Mode |
KM44C4005C |
378Kb/20P |
4M x 4Bit CMOS Quad CAS DRAM with Extended Data Out |
KMM5364005BSW |
393Kb/19P |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V |
KMM5361203C2W |
280Kb/17P |
1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh |
KMM5364003BSW |
351Kb/18P |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V |
KMM5364003CSW |
391Kb/20P |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V |
KMM5364005CSW |
415Kb/21P |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V |
KMM5368003BSW |
365Kb/18P |
8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V |
KMM5361205C2W |
289Kb/17P |
1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh |
KMM5362205C2W |
296Kb/17P |
2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh |
KMM5362203C2W |
284Kb/17P |
2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V |
KMM5364003CK |
286Kb/17P |
4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V |
KMM5364005CK |
277Kb/15P |
4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V |